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| CLE234E Very High Output Aluminum Gallium Arsenide Quad chip IRED Array 0.130 (3.30) max 1.00 (25.4) min. 0.050 (1.27) max (R) Clairex March, 2006 0.213 (5.41) 0.207 (5.26) Technologies, Inc. 0.100 (2.54) pin circle ANODE ANODE 0.169 (4.29) 0.163 (4.14) (connected to case) CATHODE CATHODE 0.010 (0.25) nom 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) Cathode leads must be externally connected together Case 6 ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) features * very wide emission angle * 880nm wavelength * TO-46 header with epoxy dome * High power output absolute maximum ratings (TA = 25C unless otherwise stated) description The CLE234E is an advanced, high efficiency, high speed AlGaAs infrared-emitting diode with four times notes: 1. 0.06" (1.5mm) from the header for 5 seconds maximum. the emitting surface of the typical 2. Derate linearly 4.0mA/C from 25C free air temperature to TA = +125C. AlGaAs emitter. High power output is 3. Derate linearly 4.0mW/C from 25C free air temperature to TA = +125C. achieved with four equally spaced 4. Operation at this level requires a proper heat sink. cathode contacts for higher current distribution. Cathode contacts are bonded in pairs, each pair bonded to a separate lead, which need to be connected during operation. Chip size is 0.030" by 0.030". The TO-46 header provides reliable operation over a wide temperature range. storage temperature ...................................................................... -40C to +125C operating temperature ................................................................... -40C to +100C lead soldering temperature(1) ......................................................................... 260C (2)(4) ..................................................................... 500mA continuous forward current peak forward current (1.0ms pulse width, 10% duty cycle) .................................. 4A reverse voltage .................................................................................................... 5V continuous power dissipation(3) .................................................................... 500mW electrical characteristics (TA = 25C unless otherwise noted) symbol PO VF IR p BW HP tr, tf parameter Total power output Forward voltage Reverse current Peak emission wavelength Spectral bandwidth at half power it Emission angle at half power points Radiation rise and fall time min - typ 8.0 1.65 880 45 100 700 max 1.8 10 - units mW V A nm nm deg. ns test conditions IF = 100mA IF = 100mA VR = 5V IF = 100mA IF = 100mA IF = 100mA IF(PK) = 100mA, f = 1kHz, D.C. = 50% Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 3/15/06 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com |
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